Speakers
Description
Silicon is of great applied interest in the semiconductor industry and in detectors for physics experiments. An increased understanding of neutron induced charged particle producing reactions on silicon is particularly significant not only for basic physics but also for applications.
In the present work, an optimal set of optical model potential parameters is obtained for the n+28,29,30Si reactions up to 200 MeV, all the cross sections, the angle integrated spectra and the double differential cross sections of neutron, proton, deuteron, triton, helium and alpha-particle emission for n+28,29,30Si reactions are consistently calculated.
The optical model, the unifed Hauser-Feshbach and exciton model which includes the improved Iwamoto-Harada model, the distorted wave Born approximation, the intra-nuclear cascade model and recent experimental data are including in the theoretical calculations.
The results are analyzed and compared with existing experimental data and evaluations in ENDF/B-VIII.0 and JENDL-4.0.